Semiconductor Silicon Wafers

We are mainly specializing in the high resistance silicon floating zone in vacuum condition.

As a professional producer of silicon wafer in China, we offer the most cutting-edge technologies and expert service to satisfy your various needs with our competitive prices. All silicon wafers can be made according to your requirement in a variety of grades.

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1. FZ (NTD) Silicon Wafer
Dia.& tolerance(mm) 76.2±0.2
Type/Dopant N-type/NTD
Orientation <111>
Resistivity(Ω•cm) 30-150
ORG(%) <8
Oxygen Content(at cm-3) ≤1*1016
Carbon Content(at cm-3) ≤2*1016
Thinckness tolerance(μm) As per customer spec.
TTV(μm) ≤6
BOW(μm) ≤25
2. CZ Lapped Wafer
Dia.& tolerance(mm) 76.2±0.2
Type/Dopant N-type/Phosphorus
Orientation <111>
Resistivity(Ω•cm) 10-60
ORG(%) <15%
Oxygen Content(at cm-3) ≤1*1017
Carbon Content(at cm-3) ≤5*1016
Thinckness tolerance(μm) As per customer spec.
TTV(μm) ≤6
BOW(μm) ≤25
3. Type/Dopant: N Type/P
Material: High resistance N-silicon floating zone in vacuum condition
Orientation: <111>
Orientation <111> within degree: ≤1°
Surface: Polished or As-cut
Diameter: 45+/-0.50 mm
Thickness: 200+/-10 um
Resistivity: 2000-3000 Ohm*cm
Minor carrier lifetime: ≥1000 us
Dislocation density: Free
Microdefect density: ≤ 100/cm²
4. Type/Dopant: P Type/Boron
Material: High resistance P-silicon floating zone in vacuum condition
Orientation: <111>
Orientation <111> within degree: ≤1°
Surface: Polished or As-cut
Diameter: 100+/-0.20 mm
Thickness: 400+/-10 um
Resistivity: 3000-6000 Ohm*cm
Minor carrier lifetime:≥1000 us
Oxygen Conc. ≤ 2X10^16 atom/cm^3
CarbonConc.  ≤ 2×10^16 atom/cm^3
Dislocation density: Free
Microdefect density: ≤ 100/cm²
TTV:10-16um
Warp:18.77-30.54um
Bow: 1.83-2.96um
Primary Flat: In the plane(110), 0°  -22′
Flat length: 32-32.5mm
 
5. Type/Dopant: P Type/Boron
Material: High resistance P-silicon floating zone in vacuum condition
Orientation: <111>
Orientation <111> within degree: ≤1°
Surface: Polished  or As-cut
Diameter: 100+/-0.20 mm
Thickness: 650+/-10 um
Resistivity: 12000-20000 Ohm*cm
Minor carrier lifetime:≥1000 us
Dislocation density: Free
Microdefect density: ≤ 100/cm²
Warp:18.77-30.54um
Bow:<25um
Oxygen Conc. ≤ 2X10^16 atom/cm^3
CarbonConc.  ≤ 2×10^16 atom/cm^3

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